| 摘要 |
PURPOSE:To improve the quality of an element by providing an element isolating zone made of dioxidized silicon film which contains reverse conductive type impurity to a source or drain region adjacent to the zone or a polycrystalline silicon film. CONSTITUTION:An SiO2 film 2 is covered on a P type semiconductor substrate 1 by a chemical vapor phase growing method, and patterned by a photographic process to form an element isolating zone. Then, a P type semiconductor layer is epitaxially grown from the upper surface, and a P type element region 3 is formed. Boron is diffused from a boron silicate glass film 12 to an element region 13 by the heat treatment during the steps to form a boundary S in high density P type region 16. Thus, the portion S that the conventional leakage current is generated is erased by inversing from N type to P type. Accordingly, the leakage current from these regions can be reduced, thereby improving the element characteristic. |
