| 摘要 |
PURPOSE:To improve the step covering property of metal wirings while maintaining the ohmic bondability between the wirings and a semiconductor substrate preferably by accumulating a metal layer in a hole formed in an insulating film on the substrate and then inclining by reactive ion etching the upper edge of the hole. CONSTITUTION:Substantially vertical hole 14 is formed by reactive ion etching in an insulating film 12 on a semiconductor substrate 11. Then, a metal layer 10 of W, P, Pt, Pd, Mo, etc. is accumulated in the hole 4 in the thickness of about half of the film 12, and ohmically bonded to the substrate 11. To improve the coverage property of the wirings, the entire substrate surface is etched, the hole 14 is formed as a hole 16 having a slope on the upper edge. Then, since the layer 10 is accumulated in the hole, the semiconductor is not damaged at the etching time to incline the upper edge of the hole. Accordingly, it does not affect the adverse influence to the ohmic bonding between the wirings 17 and the substrate 11, thereby improving the covering property of the wirings. |
