| 摘要 |
PURPOSE:To integrate a semiconductor circuit network by forming a longitudinal groove on the surface of a semiconductor substrate, and forming an insulating layer corresponding to the capacity unit of a capacitor pattern along the side and bottom of the groove. CONSTITUTION:An insulating film 22 such as silicon oxidized film is formed on an N type semiconductor substrate 21. A hole 24 is opened thereat by a photoresist film 23, and an N<+> type diffused layer 25 is correspondingly formed. Subsequently, a longitudinal groove 26 is formed. Then, an N<+> type diffused layer 25a of the same conductive type as the substrate 21 is formed, and an insulating layer 27 is formed on the surface of the layer 25a. A conductor 28 is filled in the space in the groove 26 covered with the layer 27. The part of the conductor 28 becomes the second electrode of the capacitor. The diffused layer 25 corresponding to the electrode and the conductor 28 corresponding to the second electrode are formed by leading by electrode wiring layers 29a, 29b made of metal material such as aluminum. |
