| 摘要 |
PURPOSE:To reduce boundary energy level density and to alleviate the generation of a crystal dislocation by using metal electrodes of plane core or cubic core structure substantially equal to 1/2.2<1/2> or 1/2 of lattice constant of InP single crystal. CONSTITUTION:When metal matched with crystal lattice on InP single crystal (001) plane is epitaxially grown, a boundary energy level density decreases, to prevent the crystal dislocation, but there is no metal which coincides with lattice constant a0 of InP. However, when the lattice constant of plane core cubic structure is equal to a0/2.2<1/2>, or when the lattice constant of a plane core cubic metal is equal to a0/1, similar effect is obtained. Accordingly, when metal which coincides with these values within 3% of error such as Ag, Fe is used, the boundary energy level density can be reduced. |
