| 摘要 |
PURPOSE:To form a flat active layer having less crystal defect by adding Sn to growing solution containing Te and using N type III-V group compound formed by liquid phase epitaxial grown. CONSTITUTION:A P type GaAs layer 2 is formed by liquid phase epitaxial growth on an N type GaAs substrate 1, selectively etched to form a groove 3 of depth reaching the substrate 1. Then, an N type Al0.4Ga0.6As layer 15, an Al0.12 Ga0.88As active layer 5, a P type Al0.4Ga0.6As layer 6, and a P type GaAs layer 7 are sequentially formed on the substrate by liquid phase epitaxial growth. The solution for growing the layer 15 uses solution which contains Te and Sn added. Thus, the surface of the active layer 15 is formed flat, the layer 5 formed thereon is formed flat, thereby reducing the crystal defect. |
