| 摘要 |
PURPOSE:To increase the current amplification factor by forming different conductive type emitter and collector from a base region having large forbidden band with at both sides of the base region of small electron affinity formed on a substrate which does not include impurity. CONSTITUTION:A base region 8 made of the same conductive type second semiconductor having smaller electron affinity than the first semiconductor is formed on the first semiconductor layer 7 which does not include impurity, and is interposed between an emitter region 10 and a collector region 11 made of other conductive type semiconductor having larger forbidden band width than the first semiconductor. Electrodes 4, 5, 6 are formed on the regions 8, 9 10. Thus, the operating speed is accelerated, and the current amplification factor can be increased. |
