| 摘要 |
PURPOSE:To obtain a resist capable of forming a positive type resist pattern through exposure to UV rays and dry development by using a mixture of a UV sensitive resist contg. a novolak resin and N-phenylaminopropyltrimethoxysilazane. CONSTITUTION:A mixture of N-phenylaminopropyltrimethoxysilazane and a UV sensitive resist contg. a novolak resin, such as positive type resist having an o-naphthoquinonediazidesulfonic acid ester photosensitive group, mixed with a phenol novolak resin, is used for a positive type resist material used for dry development. The novolak resin is innately soluble in alkali, and the org. silicon compd. substitutes the OH groups of said photosensitive group and the novolak resin for H in the presence of alkali to convert the resin into an alkali-insoluble and org. solvent-soluble type. As a result, a positive type pattern can be obtained by oxygen plasma development, and the effect that this resist can be utilized for dry process is extremely valuable. |
