| 摘要 |
PURPOSE:To eliminate an inverted layer yielded in a substrate and to stabilize the characteristics, by depositing a polyimide resin on the entire surface including electrodes in order to enhance withstand voltage in a semiconductor element having a P-N junction, providing void parts at the exposed end surface of the P-N junction, and coating the entire surface by an epoxy or silicone resin with the void parts being buried. CONSTITUTION:A P-type emitter region 36 and a collector region 37 are diffused and formed in the surface layer part of an N-type Si substrate 31. An SiO2 layer 32 is deposited on the entire surface including the regions. Windows are opened, and Al electrodes 34 and 35 are attached to the regions 36 and 37, respectively. Then, a polyimide resin layer 33 is deposited on the entire surface including the electrodes in order to enhance moisture resistance. At this time, void parts 38 and 39 are provided in the vicinity of the regions 36 and 37 in the exposed surface of the P-N junction. Then, with the void parts being buried, an epoxy or silicone resin 40 is deposited. In this constitution, even though bias is applied at a high temperature, inverted layers are not yielded in the surface of the substrate 31 beneath the void parts 38 and 39. |
