| 摘要 |
PURPOSE:To make the measurement of optical characteristics simple and accurate by irradiating the light receiving surface of the element with a light by means of an optical fiber, when said charcteristic of the title element in wafer state is measured. CONSTITUTION:A semiconductor wafer 13 wherein the light receiving element made of many avalanche photo diodes, etc. is formed is placed on a stage 14, and then the tip of the optical fiber 11 and that of a probe 15 are made to abut against the element surface to be measured. Here, said fiber 11 is mounted on a fine movement table 12 provided on a common supporter 18, and the light from the semiconductor laser not illustrated is made incident to the other end of the fiber 11. Besides, the probe 15 is mounted on said table 16, and a bias is impressed from the other end by means of a circuit not illustrated. In this manner, the light 28 having a fixed wavelength and a fixed strength is made incident to the impurity implanted region 23, i.e., light receiving surface 29 of a diode from the tip part 26 of the fiber 11, and at the same time the tip 27 of the probe 15 is made to abut against an electrode 25, thus performing successive measurements. |
