| 摘要 |
PURPOSE:To avoid the dispersion in width of a resist lines formed after development, by actually measuring the distribution of the thickness of a resist film on an Si wafer, computing the thickness of the resist film, and performing exposure in each region so as to obtain the optimum exposure energy. CONSTITUTION:Resist is applied on an Si wafer so as to obtain a specified thickness by a resist applying device 42. Heat treatment is performed by a prebaking furnace 43 in order to remove the solvent of the resist. The distribution of the thickness of the applied resist on the Si wafer is actually measured by a resist-film-thickness measuring device 44. The actually measured value is stored in a memory device that is built in the device 44. The value is used for the computation of an exposing time when mask pattern exposure, which is the next process, is performed by a 10:1-reduction projecting device. An integrated circuit element pattern is exposed on the entire surface of the Si wafer by a device 45. Etching treatment of the Si wafer is performed by an etching device 47. Thus, the dispersion in width of the resist lines formed after the development can be avoided. |
