| 摘要 |
PURPOSE:To improve the memory density of a memory by a method wherein a region of the other conductivity type is diffusion-formed in the surface layer of a semiconductor substrate of one conductivity type, and a metal is mounted on the diffused region through a connecting hole provided in an insulation layer adhered on the substrate surface, thus being made as a Schottky diode, which is arranged at the position of matrix intersection of the read only memory. CONSTITUTION:An N type region 2 and an N<+> type region 3 abutting against each other are diffusion-formed in the surface layer part of the P type Si substrate 1, the entire surface is covered with an SiO2 insulation film 9, and connecting holes 8 and 7 are bored by making them correspond to the regions 2 and 3, respectively. Next, a Schottky electrode of PtSi, etc. is mounted on the region 2 exposed in the connecting hole 8, and an Al ohmic electrode 4 is provided on the region 3 exposed in the hole 7, resulting in the formation of the Schottky diode. Thereafter, said diodes are respectively arranged at each intersection of many word lines A1-An led out of a word line decoder/drive circuit 1 with many data lines Ba-Bm led out of a data line decoder 2. |
