| 摘要 |
PURPOSE:To obtain excellent characteristics of capacitance and withstand voltage and eliminate the short circuit between metallic layers by a method wherein the lamination film of the first insulation film whose chemical vapor reaction temperature is set at 250 deg.C or less and the second insulation film whose reaction temperature 250 deg.C or more is provided on the first wiring metallic layer, and the second wiring metallic layer is formed thereon, when a multilayer interconnection is formed on the titled device. CONSTITUTION:An SiO2 film 2 is adhered on an Si substrate 1, first the first layer Al wiring 3 is provided, and, while the temperature of the substrate 1 is set at 250 deg.C or less, the first insulation film 7 made of Si3N4 is produced by setting the pressure at 0.1-4Torr using SiH4, NH3, and N2 gasses. Next, the second insulation film 4 of Si3N4 is produced on the film 7 by the same method by setting the growing temperature at 250 deg.C or more. Then, the second Al wiring 6 rectangularly intersecting with the first layer wiring 3 is formed on these double layer insulation films. Thus, the projection of Al particles in the wiring 3 is prevented by the film 7, and accordingly the characteristics such as capacitance and withstand voltage are enhanced. |
