发明名称 Large thin film solar cell prodn. without short or shunt circuit - by forming semiconductor on front of first contact before coating with semiconductor
摘要 Thin film solar cell of large area has a substrate with electroconductive (first) contact, a first p- or n-conducting film and a second n- or p-conducting film or Schottky barrier film, which is provided with an electroconductive (second) contact, pref. in the form of a grid. Before application of the first semiconductor film, the first contact is treated to convert its front surface into a semiconductor of this type or provided with another coating which is corresponds to the first semiconductor film. USE/ADVANTAGE - The process is useful for making tandem solar cell systems. Lack of homogeneity (esp. pin holes) in the first film is not detrimental to the finished solar cell and the need to remedy short or shunt circuits is avoided. The process is simple, reliable and economical.
申请公布号 DE3312052(A1) 申请公布日期 1984.10.11
申请号 DE19833312052 申请日期 1983.04.02
申请人 NUKEM GMBH, 6450 HANAU, DE 发明人 HEWIG, GERT, DR., 8755 ALZENAU, DE;KROLL, HARTMUT, 6450 HANAU, DE
分类号 H01L31/0224;H01L31/0296;H01L31/0336;H01L31/18;(IPC1-7):01L31/18;01L21/30 主分类号 H01L31/0224
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