| 摘要 |
PURPOSE:To obtain the elements having different current amplification factors without changing the pattern dimension of a transistor by a method wherein a region of the second conductivity type is provided in a region of the first conductivity type formed in an island, and, when an emitter region of the first conductivity type is formed therein, thus forming them into a bi-polar type IC, the region of the first conductivity type whose impurity concentration is higher than that of said region of the first conductivity type and lower than that of a base region. CONSTITUTION:Two N<+> type buried regions 3 are diffusion-formed in the surface layer part of a P<-> type Si substrate, an N<-> type layer 5 serving as the collector is epitaxially grown over the entire surface including said regions, which layer 5 is isolated into two regions by a P<+> type region 2 while said layer is made to include the regions 3. Next, an N<+> type collector contact region 4 is projected at the end of the region 3, and a P type base region 12 and an N<+> emitter region 14 positioned therein are provided in adjacency to said contact region. In this constitution, a shallow N type layer 10 whose concetration is higher than that of the layer 5 and lower than that of the region 12 is provided on the surface of one region 15. |
