| 摘要 |
PURPOSE:To obtain an inverter of uniform characteristic by a method wherein enhancement type and depletion type high electron mobility transistors of uniform electric characteristic are provided over the whole range of the substrate surface. CONSTITUTION:A channel layer 12 composed of a high purity GaAs layer is formed on a semi-insulation GaAs substrate 11, and an electron supplying layer 13 made of Al0.3Ga0.7As and a GaAs adjusting layer 14 are epitaxially grown thereon by lamination. Next, a metallic electrode 15 for the enhancement element is provided on the layer 14, and the layer 14 at the exposed part is removed by etching with said electrode as a mask, thus generating an electron accumulated layer 16 at the same time in the surface layer part of the exposed layer 13. Thereafter, a metallic Schottky gate electrode 17 for the depletion element is provided at a distant from the electrode 15, an earth electrode 18 and a VDD electrode 20 are adhered on both sides of the electrode 15 and 17, respectively, and an output electrode 19 is formed between the electrodes 15 and 17. Thus, the formation of the LSI consisting of high electron mobility transistors is facilitated. |
