| 摘要 |
PURPOSE:To simply manufacture the second protective film of good quality by a method in which the first protective film is formed on a heating element and then the second protective film is formed without breaking vacuum. CONSTITUTION:When sputtering is made by application of RF voltage between a sample base 301 packed with a sputtering gas (O2+Ar) and RF electrode 302 provided with SiO2 target under the condition that a specimen A is placed on the specimen base 301 in a bell-jar 300, a desired thickness of the first protective film of SiO2 is formed on a heating element 3 and a power supplyer 4 by reactive sputtering of the mixed sputtering gas 304 of O2 and Ar. The filling of the sputtering gas 304 is stopped, vacuum is recovered sufficiently by a vacuum pump, a sputtering gas 305 composed of a mixed gas of N2 and Ar is charged into the bell-jar 300, and the second protective film 6 of a desired thickness is formed on the first layer 5 by using Si3N4 from the reactive sputtering. The number of the manufacturing processes can thus be reduced and good-quality protective films can be obtained. |
