| 发明名称 |
Method of producing light-emitting diodes |
| 摘要 |
Improvement of the reflection behaviour of the internal surface (5) of the back of a light-emitting diode by incipient melting (25) with light radiation (20) and etching-off (35), accompanied by simultaneous self-aligned production of the counterelectrode (6'). <IMAGE>
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| 申请公布号 |
DE3310373(A1) |
申请公布日期 |
1984.10.11 |
| 申请号 |
DE19833310373 |
申请日期 |
1983.03.22 |
| 申请人 |
SIEMENS AG |
发明人 |
F.,DR. KRIMMEL,EBERHARD;WEYRICH,CLAUS,DR. |
| 分类号 |
H01L21/285;H01L33/00;H01L33/10;H01L33/22;H01L33/38;(IPC1-7):H01L33/00;H01L21/26;H01L21/42;H01S3/19 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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