| 摘要 |
A semiconductor device comprises an insulating layer (10), a first p-type region (12-1) and a first n-type region (12-2) formed on the insulating layer to constitute a first diode, and a second p-type region (12-4) and a second n- type region (12-3) to constitute a second diode. The first p-type region (12-1) abuts on the second n-type region (12-3) and is isolated from the second p-type region (12-4), while the first n-type region (12-2) abuts on the second p-type region (12-4) and is isolated from the second n-type region (12-3). The isolation may be a gap 14 in the semiconductor layer or a solid portion of insulation material. Electrodes 18, 20 short these pin junctions in an array of such devices which are not required. <IMAGE> |
