| 摘要 |
<p>A static type memory circuit has a plurality of memory cells (MC-11 to MC-MN) arranged in a matrix form, a plurality of word lines (WL-1 to WL-N) and a plurality of pairs of bit lines (BL1-1 to BL1-M, BLO-1 to BLO-M), each oftheword lines (WL-1 to WL-N) being coupled to memory cells on a corresponding row, each pair of the bit lines (BL1-1 to BL1-M, BLO-1 to BLO-M) being commonly coupled to memory cells on a corresponding column, a sense amplifier circuit (SA-1 to SA-M) coupled to the bit lines, a row decoder (20) for energizing one of the word lines in response to row address data, a transition detecting circuit (14) for generating an output signal when the row address data is changed, a control signal generator (16) for causing the sense amplifier circuit (SA-1 to SA-M) to be active in response to the output signal from the transition detecting circuit (14), and a precharge control circuit (18) for controlling precharging of the bit lines in response to the output signal from the transition detecting circuit (14). The precharge control circuit (18) precharges the bit line to "1" level potential when the sense amplifier circuit (SA-1 to SA-M) is rendered nonoperative in response to the output signal from the control signal generator(16), and stops the precharging operation in response to an output signal from the transition detecting circuit (14).</p> |
