| 摘要 |
A thin film, field effect transistor device having a source region, a drain region, a gate insulator 26, a thin film 14 of deposited amorphous alloy including at least silicon and fluorine coupled to the source region, the drain region and the gate insulator and a gate electrode 28 in contact with the gate insulator. Preferably, the amorphous alloy also contains hydrogen and is a-Sia:Fb:Hc, where a is between 80 and 98 atomic percent, b is between 1 and 10 atomic percent and c is between 1 and 10 atomic percent. The field effect transistor can have various geometries, such as a V-MOS-like construction and can be deposited on various substrates 12 with an insulator substrate between the active regions of the thin film, field effect transistor and a conducting substrate. The transistors can be formed stacked upon one another to further increase the packing density of the device. <IMAGE> |
