Ion implantation apparatus

摘要

An ion implantation apparatus in which ions are dispersed by a dispersion magnetic field and the dispersed ions of a predetermined mass number are focused on a slit and directed therethrough toward a target. The ions of the predetermined mass number are electromagnetically scanned by a deflection magnetic field preceding the slit in a direction which is orthogonal to the dispersion plane. The target is subjected to reciprocating motion in a direction which is orthogonal to the scanning direction of the ions of the predetermined mass number.