发明名称 |
Stacked MOS transistor |
摘要 |
In a stacked metal-oxide-semiconductor (SMOS) transistor, the transistor source, drain and channel each have a lower part formed in a silicon substrate and an upper part composed of recrystallized polysilicon. The device gate is located between the upper and lower channel parts. By vertically integrating a MOS transistor, performance limitations imposed by the direct scaling approach to device miniaturization are avoided.
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申请公布号 |
US4476475(A) |
申请公布日期 |
1984.10.09 |
申请号 |
US19820442864 |
申请日期 |
1982.11.19 |
申请人 |
NORTHERN TELECOM LIMITED |
发明人 |
NAEM, ABDALLA A.;NAGUIB, HUSSEIN M.;CALDER, IAIN D.;BOOTHROYD, ALBERT R. |
分类号 |
H01L21/268;H01L21/822;H01L27/06;(IPC1-7):H01L29/78;H01L27/02;H01L29/04 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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