发明名称 Annealing method for amorphous magnetic alloy
摘要 Annealing method for an amorphous magnetic alloy including the steps of preparing an amorphous magnetic alloy film, and annealing the amorphous magnetic alloy film at an elevated temperature lower than Curie temperature and crystallization temperature of the amorphous magnetic alloy film under an application of a repetition of alternately applied a first magnetic field and a second magnetic field, in which the first magnetic field is applied along one direction in a major surface of the amorphous magnetic alloy film for a predetermined period, and the second magnetic field is applied along a second direction perpendicular to the one direction in the major surface of the amorphous magnetic alloy film for the predetermined period.
申请公布号 US4475962(A) 申请公布日期 1984.10.09
申请号 US19830511645 申请日期 1983.07.07
申请人 SONY CORPORATION 发明人 HAYAKAWA, MASATOSHI;ASO, KOICHI;UEDAIRA, SATORU;OCHIAI, YOSHITAKA;MATSUDA, HIDEKI;HOTAI, KAZUHIDE;HAYASHI, KAZUHIKO
分类号 C21D1/04;C21D6/00;C22C45/02;C22F1/00;C22F1/10;G11B5/127;G11B5/147;H01F1/153;(IPC1-7):C21D1/04 主分类号 C21D1/04
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