| 摘要 |
PURPOSE:To prevent the lowering of performance and secular change of an element, and to form an electrode having an excellent ohmic contact by forming a thin aluminum silicide layer on the surface of an amorphous silicon group semiconductor through a mutual diffusion between Al and Si. CONSTITUTION:An aluminum silicide layer 22 is formed in such a manner that aluminum is evaporated under vacuum through electron-beam evaporation in 20-100Angstrom thickness and the evaporated material is kept at a temperature such as 240 deg.C and annealed and treated for approximately 15min. The layer 22 is a thin layer formed through a mutual thermal diffusion between aluminum and silicon. A metallic layer 24 is shaped on the surface of the aluminum silicide layer 22 through a vacuum evaporation. The metallic layer 24 consists of an alloy such as a nickel-chromium alloy in 2,000-3,000Angstrom . |
