发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To enable to form an amorphous thin film having uniform film thickness, having scanty defects according to dust, etc., and having an extremely stable characteristic by a method wherein a gaseous compound is introduced uniformly between electrodes through gas diffusion plates of at least two sheets containing the electrode perforated with penetrating hole parts at the prescribed positions respectively. CONSTITUTION:A top electrode 33 set up with a substrate holder 34, and an under electrode 35 to face to the top electrode 33 thereof through the substrate holder 34, and perforated with penetrating hole parts 35a as to make the interval to be several mm.respectively on the whole surface, for example, are provided in a vessel 31 enabled to draw to vacuum. A gas introducing mechanism to introduce a gaseous compound from a cylinder 38 reaches a gas exhaust vent 37 from a gas introducing vent 32 through a funneled guide plate 39. A gas diffusion plate 40 to face to the under electrode 35, and perforated with penetrating hole parts 40a at the positions not to pass directly the main current of the gaseous compound fed from the gas introducing vent 32 is provided in the guide plate 39 thereof. A heater 41 to heat the substrate holder 34 to the prescribed temperature is buried in the top electrode 33 to be earthed, and the under electrode 35 is earthed through a high-frequency electric power source 36.
申请公布号 JPS59177920(A) 申请公布日期 1984.10.08
申请号 JP19830051490 申请日期 1983.03.29
申请人 TOSHIBA KK 发明人 YANO KENSAKU;YOSHINO TSUNEICHI
分类号 H01L31/04;C23C16/44;C23C16/509;H01L21/205 主分类号 H01L31/04
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