| 摘要 |
PURPOSE:To obtain the titled sensor with excellent reproducibility, and to improve yield by laminating and forming a crystalline thin-film and a silicon single crystal film on one surface of a silicon single crystal substrate in succession, shaping a recessed section reaching to the crystalline thin-film on the other surface side through an etching and forming a diaphragm section to the bottom of the recessed section. CONSTITUTION:A crystalline thin-film 11 in approximately 0.2mum thickness is formed on one surface of a silicon single crystal substrate 10. The crystalline thin-film 11 consists of a spinel film, on which a silicon single crystal can be grown and which is composed of a substance such as MgO.Al 203. A silicon single crystal film 12 in approximately 20mum thickness is formed on the upper surface of the crystalline thin-film 11. The other surface of the silicon single crystal substrate 10 is coated with etching masks 13 consisting of silicon dioxide, and a recessed section 14 reaching to the crystalline thin-film 11 is shaped on the other surface side of the substrate 10 through a selective etching by using the masks 13. The etching masks 13 are removed while piezoresistors 15, 15... are diffused and formed on the upper surface of the silicon single crystal film 12. A spinel crystalline thin-film 11a applied on the bottom of the recessed section 14 and a silicon single crystal film 14a immediately above the thin-film 11a function as diaphragm sections at that time. |
