| 摘要 |
PURPOSE:To obtain a semiconductor device, in which there is hardly frequency dispersion of gm and high-frequency characteristics thereof are excellent, by forming an insulating film of superior interface characteristics to the surface of an active layer consisting of a compound semiconductor. CONSTITUTION:A normal wafer in which a GaAs buffer layer 42 and an N type GaAs active layer 43 are grown on a semi-insulating GaAs substrate 41 in an epitaxial manner is used, and a mesa section is formed through the so-called mesa-etching. A high-resistance AlxGa1-xAs thin-film 44 is formed on the whole surface, the thin-film 44 is patterned, a source electrode contact window and a drain electrode contact window are shaped, and a source electrode 45S and a drain electrode 45D are formed. The thin-film 44 is patterned to form gate electrode contact windows, Al films are shaped, and gate electrodes 46G are formed. An SiO2 film 47 is patterned, a source electrode extracting window and a drain electrode extracting window are formed and an evaporated film consisting of Au.Ge/Au is shaped, and the evaporated film is patterned and lead-out wires 48S and 48D, etc. for a source and a drain are formed.
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