| 摘要 |
PURPOSE:To enable simultaneous evaluation of the crystallinity of silicon and spinel by making the Kalpha characteristic X-rays of Cu and Cr incident from the same direction to a spinel crystal on the surface of which a silicon crystal is formed, and separating and detecting the diffraction intensity thereof. CONSTITUTION:The Kalpha characteristic X-rays of Cu and Cr emitted from an X- ray generating part 7 pass a slit 9 and are made incident to a spinel crystal 11 forming a silicon crystal on the surface on a goniometer part 10. The diffracted X-rays are detected in a detecting part 14, and the characteristic X-rays of Cu and Cr are separated and counted in an energy analyzing circuit 15. The X-ray locking curve of the spinel by the Kalpha characteristic X-ray of Cr is displayed in the channel Ch1 on the low energy size on a recorder 17 and the X-ray locking curve of the silicon by the Kalpha characteristic X-ray of Cu is displayed in the channel Ch2 on a high energy size on a recorder 18. |
