| 摘要 |
PURPOSE:To obtain the MOS semiconductor device performing high-speed operation with high integration by forming a gate electrode by self-aligning method to a polycrystalline Si pattern for forming a lead-out wiring of source and drain regions, while surrounding this pattern by a thick oxide film. CONSTITUTION:A thick field oxide film 12 is formed around a P type Si substrate 11 and an n type polycrystalline Si patterns 151 and 152 comprising an opening on the part for forming a gate electrode are deposited while extending over the film 12. Next, p type impurity ion is implanted in the substrate 11 exposed in a recess 16 of the opening to control a threshold value and a gate oxide film 23 covers there. After that, thick oxide films 191 and 192 opened above the film 23 are laminated oppositely to each other and a gate electrode 24 is attached to the exposed film 23. Next, openings are arranged on the films 191 and 192 so as to be present above the film 12 and Al lead-out wirings 27 being connected to n<+> type source and drain regions 20 and 21 which are previously arranged through the polycrystalline patterns 151 and 152, are attached there. |
