| 摘要 |
In a device for generating a gate bias in field-effect transistors, a field-effect transistor (1) or a plurality of field-effect transistors which are similar within certain tolerances and connected in parallel are interconnected with one or more electrically driven heat sources (4) in such a way that an additional current and/or an existing channel current drives the heat source (4), thereby producing thermal energy which generates, across at least one thermoelectric transducer (6), a direct voltage which is then fed indirectly or directly to the gate (9) of the field-effect transistor (1) or the gates of the field-effect transistors. The device described is particularly suitable for use in microwave engineering. <IMAGE>
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