发明名称 SEMICONDUCTOR ELECTRODE COVERED BY FILM OF HIGH MOLECULAR COMPOUND
摘要 PURPOSE:To provide an electrode for a photocell to generate stable photoelectric currents not deteriorating in water and under irradiation of visible rays, by covering a semiconductor with a film of high molecular compound having tris (2,2'-bipyridine)ruthenium (II) type complex radical. CONSTITUTION:A semiconductor electrode is covered by a film of high molecular compound having tris(2,2'-bipyridine)ruthenium (II) type complex radical. The semiconductor may be, for example, GaAs, GaP, CdS, CdSe, InP or Si and the high molecular compound may be, for example, such as shown in the formula (1), which is synthesized by copolymerization of 4-methyl-4'-vinyl-2,2'- bipyridine with other vinyl compound and subsequent reaction of the same with cib-bis(2,2'-bipyridine)ruthenium (II) dichloride (Ru(bpy)2Cl2). The photocell is constructed by the combination of the thus produced electrode and a counter electrode of platinum or the like immersed in a water solution including a redox indicator.
申请公布号 JPS59175566(A) 申请公布日期 1984.10.04
申请号 JP19830049569 申请日期 1983.03.24
申请人 RIKAGAKU KENKYUSHO 发明人 YAMADA AKIRA;KANEKO MASAO;KURISHIYUNAN RAJIESHIYUUOO
分类号 H01M4/90;H01G9/20;H01L51/42;H01M4/86;H01M14/00 主分类号 H01M4/90
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