MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent Si in a diffusion layer from being etched and realize uniform diffusion by a method wherein a thin oxide film is formed on an exposed surface of a semiconductor substrate by dipping the substrate in a highly oxidative solution. CONSTITUTION:A diffusion protection film 12 is formed on the surface of a semiconductor substrate 11 and an aperture 13 is formed in the film 12 to expose the surface of the substrate 11 selectively. Then the substrate 11 is dipped in an oxidative solution to form a thin oxide film 13 on the exposed surface of the substrate 11. Then the substrate 11 is inserted into a high temperature reaction furnace with an inert gas atmosphere. After the substrate 11 is heated sufficiently and uniformly, BCl3 gas and O2 gas are introduced into the reaction furnace to form a boron diffusion layer 15 on the substrate surface under the film 14. With this constitution, Si in the layer 15 is prevented from being etched and uniform diffusion can be realized.