| 摘要 |
PURPOSE:To prevent a reaction between the inner wall of a base metallic capillary and halogen by putting a boron wire into said capillary and forming a boron layer by a cheical vapor deposition process. CONSTITUTION:The surface of a titanium capillary 1 having a 0.35mm. outer diameter (0.25mm. inner diameter) is cleaned with solvent defatting and pickling. The capillary 1 is put into a 10<-5>-10<-6>mm.Hg vacuum, and the boron is heated by an electron beam while revolving the capillary 1. Then a PVD boron film 11 is attached to the surface of the capillary 1 with the heat treatment carried out at 400-500 deg.C. A thin boron wire 10 is put into the capillary 1. Then the capillary 1 is put into a CVD reaction tube 4 of glass, and the voltage is inpressed to the capillary from a power supply 9 via platinum wires 2 and 3 and a mercury electrode 5 to heat the capillary up to 900-1,200 deg.C. Then a gaseous mixture of boron trichloride and hydrogen is supplied through a gas supply port 7 to attach a CVDa-B film 12 onto the capillary 1. The supply of voltage is discontinued, and a pipe is extracted. Then titanium is dissolved with a mixture solution of hydrofluoric acid hydrochloric acid. Thus a boron capillary is obtained. |
