| 摘要 |
PURPOSE:To measure the diameter of a single crystal during growth by pulling and to carry out exact control by using materials having small X-ray absorbing power as the materials of a crucible, a crucible holder, a heater and the windows of a high pressure vessel and by irradiating X-rays through them. CONSTITUTION:A single crystal 1 is grown by pulling-up from a crucible 3 in a crucible holder 4 through a liq. capsule 2 of B2O3 or the like in a high pressure reactor 6 provided with a heater 5 to manufacture a single crystal of a group III-V compound semiconductor such as GaAs. At this time, the crucible 3, the holder 4, the heater 5 and the windows 7 of the reactor 6 are made of graphite or quartz having smalller X-ray absorbing power than the crystal 1, and X-rays are irradiated from an X-ray source 8. The irradiated X-rays are detected with an X-ray detector 9 placed opposite to the source 8 with the reactor 6 in-between to obtain an X-ray image of the crystal 1. This image is displayed on an image monitor 10, and it is fed back to a diameter controller 11. The pulling speed and the internal temp. of the reactor 6 are controlled to obtain a high quality single crystal. |
