| 摘要 |
PURPOSE:To protect a circuit from the input of an over voltage by forming a Zener diode made of polycrystalline Si between an input or output electrode and an earth electrode wiring, in a thin film IC using a polycrystalline Si film. CONSTITUTION:The p-n junction Zener diode 12 is formed by forming the p<+> type polycrystalline Si and the n<+> type one on the polycrystalline film 12 formed on a quartz substrate 11. This Zener diode 12 is connected between the input or output electrode of the IC using the polycrystalline Si film and the earth electrode wiring and then used to protect the IC. |
