发明名称 THIN FILM HETERO JUNCTION PHOTOVOLTAIC CELL AND METHOD OF PRODUCING SAME
摘要 A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250 DEG C and 500 DEG C for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.
申请公布号 JPS59175165(A) 申请公布日期 1984.10.03
申请号 JP19830042522 申请日期 1983.03.16
申请人 MONOSOORAA INC 发明人 BARENTO EMU BATSUSORU;ERITSUKU ESUUEFU TSUENGU;ROBAATO ERU ROTSUDO
分类号 H01L31/04;H01L21/368;H01L31/0224;H01L31/0392;H01L31/073;H01L31/18 主分类号 H01L31/04
代理机构 代理人
主权项
地址