| 摘要 |
PURPOSE:To simplify the manufacturing process by a method wherein a metal having a work function smaller than said function of an amorphous intrinsic semiconductor layer is used for the III layer formed on said semiconductor layer. CONSTITUTION:A clear electrode 6 is formed on a glass substrate 5, and a p- layer 2 as the I layer is formed, and thereafter the amorphous intrinsic semiconductor layer (i-layer) 3 is formed. Using the metal such as Mg having a work function smaller than that of the i-layer 3, a metallic layer 13 is laminated on said layer 3 as the III layer. The metallic layer 13 and the i-layer 3 form an ohmic junction, and then a built-in electric field is formed in the i-layer 3 according to size of the work functions of both, resulting in good action as the title element. Therefore, since a thin film forming device for n-layer formation is unnecessitated, the manufacturing process can be simplified. |
