发明名称 MEMORY READING CIRCUIT
摘要 <p>PURPOSE:To prevent malfunction where a column line moves between a dummy word line and a dummy word and to shorten an access time by detecting the drive of a predecoder and driving the dummy word line of a dummy cell when said predecoder drive is detected. CONSTITUTION:A dummy decoder 28 is actuated by the output of a circuit 31 which detects the working of a pre-X decoder 25. A Y decoder 26 works after detecting the rise of a dummy word line DW, and a column line C has a fall. In this case, the line DW has a rise slightly later than a word line W. Then the line C has a fall after the rise of the line DW is detected.</p>
申请公布号 JPS59175097(A) 申请公布日期 1984.10.03
申请号 JP19830048349 申请日期 1983.03.23
申请人 SONY KK 发明人 KUBOTA MASATO;NAKAGAWARA AKIRA
分类号 G11C17/00;G11C17/18;(IPC1-7):G11C17/00 主分类号 G11C17/00
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