| 摘要 |
PURPOSE:To obtain a quartz base material doped with only TiO2 while preventing doping with Ti2O3 by carrying out the vapor phase oxidation or flame hydrolysis of SiCl4 and TiCl4 in the presence of a specified volume or more of oxygen and by specifying the distance from an inlet for feeding the gaseous starting materials to a heat resistant substrate. CONSTITUTION:SiO2 contg. TiO2 formed by the vapor phase oxidation or flame hydrolysis of SiCl4 and TiCl4 is deposited on a heat resistant substrate, and it is directly melted to grow continuously a quartz base material in the axial direction. At this time, the volume of oxygen to be introduced into the reaction system is made >=10 times the theoretical value, and the distance from an inlet for feeding the gaseous starting materials to the substrate is regulated to 50- 250mm.. Only TiO2 is contained in SiO2 by introducing said volume of oxygen, and unreacted Ti2O3 is prevented from entering the reaction product by regulating the distance from the inlet to the substrate on which the product is deposited to said value. A quartz base material doped with only TiO2 is obtd. |
