发明名称 |
Method for pattern-wise etching of a metallic coating film |
摘要 |
The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.
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申请公布号 |
US4474642(A) |
申请公布日期 |
1984.10.02 |
申请号 |
US19830514793 |
申请日期 |
1983.07.18 |
申请人 |
TOKYO DENSHI KAGAKU CO., LTD. |
发明人 |
NAKANE, HISASHI;NAKAYAMA, MUNEO;HASHIMOTO, AKIRA;NISHIMURA, TOSHIHIRO |
分类号 |
C23F1/00;C23F4/00;H01L21/302;H01L21/3065;H01L21/312;H01L21/3213;(IPC1-7):C23F1/02;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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