Method of controlling the supercurrent of a Josephson junction device

摘要

A novel method of depositing the oxide barrier junction on a base electrode of a Josephson junction device is provided. An ionized oxygen plasma region is generated juxtaposed the surface of the base electrode to be oxidized. The pressure of the oxygen in the vacuum chamber is held at a predetermined high pressure where the zero voltage supercurrent is found to be independent of oxygen pressure variations and the flow of oxygen through the vacuum chamber is stabilized at the optimum minimum necessary for growth of the oxide barrier junction. The oxide barrier junctions so produced have consistent and predictable supercurrent densities.