发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To make uniform the thickness of a thin metal film to be formed, by enlarging a sputtering domain on a target, in a magnetron sputtering device for impressing high voltage on said target provided under the affection of a magnetic field to perform sputtering. CONSTITUTION:The magnetron sputtering device impresses high voltage on a target 11 provided under the affection of magnetic fields 13, 14 to perform sputtering. An annular electromagnet 15 is provided around said target 11, and another magnet 16 having reversed polarity against that of the annular magnet 15 is provided below the target 11. In addition, said magnet 16 is made rotatable by fixed mounting it on a holder 12. Consequently, magnetic fields 13, 14 are enlarged to the periphery of the target 11.
申请公布号 JPS59173265(A) 申请公布日期 1984.10.01
申请号 JP19830047361 申请日期 1983.03.22
申请人 FUJITSU KK 发明人 FUJITA ICHIROU;OOTAKE HIDEAKI;TAKEUCHI TOORU
分类号 C23C14/36;C23C14/35;H01J37/34;H01L21/203;H01L21/285 主分类号 C23C14/36
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