| 摘要 |
PURPOSE:To enable to realize the low resistance and the miniaturization of the titled device by combining a photoconductive film with a resistant film. CONSTITUTION:A resistant film 4 is formed on one side of a rectangular photoconductive film 1 in the direction from an input terminal 2 to an earth terminal 3, and a metallic electrode 5 is formed along the resistant film. When the device formed in such a manner is compared with the case of only a photoconductor, remarkable low resistance can be contrived in dark state and bright state. In other words, the variation of resistance values at the high resistant region in the case of only the photoconductive film is enabled to be changed into the variation of resistances at the low resistant region by combination with the resistant film, which produces an element very easy to use as a general circuit element. |
