| 摘要 |
PURPOSE:To obtain a mixed crystal semiconductor which has a wide light emission band width in which the light emission of fine crystals with different forbidden bands by a method wherein at least one of the P type zone or the N type zone of a P-N junction is formed by a semiconductor mixed crystal which has average composition within the melting point gap range. CONSTITUTION:Metal In 31 and metal Ga 32 are introduced as III group materials and transported in forms of indium chloride and gallium chloride respectively by HCl gas. AsH3 and PH3 are introduced into their downstream through a by- pass tube 33. An N<+> type GaAs substrate 34 is placed in the downstream and an N type In1-yGayAs1-xPx and a P type In1-yGayAs1-xPx are made grow on the substrate 34 to the thickness of about 2mum respectively in that order. H2S is used for S doping and Zn(C2H5)2 is used for Zn doping and the growth temperature is 800 deg.C for a source domain and 740 deg.C for the GaAs substrate. With this method, the In1-yGayAs1-xPx whose average composition is expressed by (x)= 0.04 and (y)=0.72 which are within the melting point gap was made grow to form a P-N junction. The light emission of a light emission diode thus obtained covered the wide spectrum range from 5,500Angstrom to 9,000Angstrom . This was the widest light emission wavelength range ever made by a single light emission diode. |
