发明名称 SEMICONDUCTOR WAFER SPLITTING METHOD
摘要 <p>PURPOSE:To prevent the chip of a wafer generated when the wafer is splitted enters the side of first main surface of semiconductor wafer from damaging the main surface thereof by splitting the semiconductor wafer under the condition that the first main surface of semiconductor wafer is covered with a plastic sheet and these are closely placed in contact. CONSTITUTION:A plastic sheet 4 is bonded by a bonding agent 5 to the second main surface 1b of a semiconductor wafer of which first main surface 1a is given a cutting groove 3. Moreover, the first main surface 1a of semiconductor wafer 1 is closely covered with the plastic sheet 6 coated with a bonding agent 10. When the center area of plastic sheet 4 is sequentially pressed downward under such condition, crack 7 is generated from the groove bottom along the cutting groove 3 when a bending stress is applied to the semiconductor wafer 1 and wafer is splitted into various semiconductor elements 2. As described above, the first main surface 1a of semiconductor wafer 1 is closely protected by the plastic sheet 6 coated with the bonding agent 10 and the surface is not damaged by segments 8 generated by splitting and stably splitting work can be done.</p>
申请公布号 JPS59172740(A) 申请公布日期 1984.09.29
申请号 JP19830048172 申请日期 1983.03.22
申请人 MITSUBISHI DENKI KK 发明人 TAKEHARA KATSUNAO
分类号 H01L21/301;B28D5/00;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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