发明名称 SEMICONDUCTOR RECTIFYING ELEMENT
摘要 PURPOSE:To improve thermal fatique characteristic, moisture proof and weather proof characteristics which are disadvantages of a rectifying element by configurating a resin which covers the MESA surface of silicon chip and is filling the heat radiating material with the silicon resin layer filling the bottom part of heat radiating material and an epoxy resin layer which is formed by being stacked thereto. CONSTITUTION:A resin layer 12 filling the heat dissipating material 4 of rectifying element 11 is formed by a composite layer of a silicon resin layer 13 used for covering the MESA surface of silicon chip 5 attached to the bottom part of heat dissipating material 4 and an epoxy resin layer 14 which is stacked on said silicon resin and covers hermetically the exposed surface of silicon resin layer 13. The epoxy regin layer 14 is formed, for example, by adding 50-70 wr% of SiO2 powder to the epoxy resin. The silicon regin is typically used after curing for 16hr at 200 deg.C, while the epoxy resin is, for example, hardened after curing for 16hr at 150 deg.C.
申请公布号 JPS59172749(A) 申请公布日期 1984.09.29
申请号 JP19830047061 申请日期 1983.03.23
申请人 TOSHIBA KK 发明人 NAITOU KAZUYOSHI
分类号 H01L25/11;H01L23/24;H01L23/28;H01L23/29;H01L23/31 主分类号 H01L25/11
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