| 摘要 |
PURPOSE:To obtain the titled element with less parasitic capacitance by a method wherein a source electrode and a drain electrode which do not contact a gate electrode but a semiconductor layer at the end part in the horizontal direction are provided, in a layer consisting of the gate electrode and the semiconductor layer opposed via insulator layer. CONSTITUTION:In the layer consisting of a gate electrode 2 and a semiconductor layer 4 opposed via an insulator layer 3, a source electrode and drain electrode 6 which do not contact the gate electrode 2 but the semiconductor layer 4 at the end part in the horizontal direction are provided. The gate electrode 2, insulator layer 3, and semiconductor layer 4 are successively formed by lamination on an insulation substrate 1, and a photo resist layer 5 is manufactured on said layer 4, thus forming a desired pattern. Thereafter, a part or all of the semiconductor layer 4, insulator layer 3 and the gate electrode 2 are successively removed by etching. Next, the photo resist layer 5 is removed, after forming an insulator layer 7 and an electrode layer 6 in the state of the attachment of the photo resist layer 5, and accordingly the titled element is obtained. |
