| 摘要 |
PURPOSE:To obtain the structure which protect a wire from shearing force even when it is exposed to a sharp temperature change and does not easily allow disconnection of wire by defining coverage of shielding material to the area except for the bonding pad by means of a dam provided on the main surface of semiconductor element. CONSTITUTION:The covering region of shielding material 2' is defined to the area except for the bonding pad by means of a dam 6 provided to the main surface of semiconductor element 1. The dam 6 is screen-printed under the wafer condition. As a material of dam, those which assure sufficient height by printing and results in the thickness of 20-30mum after the hardening. Moreover, those which assures good bonding characteristic with the surface protection material of semiconductor element 1 and having heat resistivity for a high temperature during die bonding are desirable. A polyimide resin is desirable as a material having such conditions. Thereby, the structure which does not easily allow generation of disconnection of wire 3 due to the temperature change cycle can be obtained. Amount of coating of expensive shielding material 2' can be reduced. |
