| 摘要 |
PURPOSE:To distinctively suppress cracks generated on an interlayer insulating film by providing a buffer film having an intermediate line expansion coefficient of the line expansion coefficients of metal wiring pattern and interlayer insulating film between said pattern and interlayer insulating film in a semiconductor device having the double layer wiring structue. CONSTITUTION:A first layer wiring pattern 13 formed through an insulating film 12, an interlayer insulating film 15 formed covering said first layer wiring pattern 13 and a metal wiring pattern 17 formed on such interlayer insulating film 15 are formed on a semiconducotr substrate 11 where an impurity region 14 is formed. A buffer film 16 having an intermediate line expansion coefficient of the line expansion coefficients of said intelayer insulating film 15 and metal wiring pattern 17 is provided between said insulating film and pattern. Thereby,a thermal stress applied on interlayer insulating film 15 can be reduced, generation of cracks can be prevented and accordingly reliability can be enhanced. |
