| 摘要 |
PURPOSE:To shield between islands of single crystal silicon forming elements and improve element characteristic by forming a region to which impurity is doped with high concentration between dielectric layers and by giving the shield effect to said region. CONSTITUTION:The islands 10, 11 of single crystal silicon are separated by silicon oxides 12, 13 obtained by oxidation of porous silicon and the N-P-N transistors are formed in the respective islands. Between two silicon oxides 12, 13, regions 14, 15 including high concentration of N type impurity are formed. These regions 14, 15 are formed in contact each other on the substrate surface. Since the region including high concentration of N type impurity is formed in both sides of the silicon oxides 12, 13, the region 16 including N type impurity in high concentration formed in the single crystal silicon island can be used as a high conductive layer which connects the buried layer 17 and collector electrode. |
